Process Dependent Strain Behaviour, Fractal Analysis, and Bonding Network of Nc-Si(SiC) Thin Films

Nanocrystalline silicon embedded carbide, nc-Si(SiC) thin films were deposited on p-type substrates by using a thermal chemical vapor deposition (CVD) with different process temperatures from 700 to 1000 °C. The SEM images reveal the Si particles are SiC films. estimated crystallite size of was varied 14 28 nm and 40.7 61 respectively Scherrer formula Williamson – Hall formula. Similarly, lattice-strain Williamson-Hall Bragg law 0.00227 0.00469 0.000855 0.00574 respectively. Raman signature at 1346.19 cm?1, 1491.78 cm-1, 1570.94 cm?1 bonding correspond D, G-Si, G peaks bandgap Tauc’s plot 3.17 2.87 eV increasing temperature. possible network core-orbital Si(2p), C(1 s), O(1 s) in have been discussed deconvolution Origin 2018.